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针对磁控溅射沉积Cr薄膜中出现的周期性同心圆条纹及应力环状缺陷问题，本文提出了一种通过工作气压调控结合双靶共溅射的工艺优化方案。通过系统实验对比了不同气压及靶位布局对应力分布的影响。结果表明，提升工作气压并引入双靶共焦正对溅射技术，可显著增强溅射粒子在输运过程中的散射作用，有效减弱高能粒子对基片的轰击。优化后的工艺成功消除了薄膜表面的同心圆条纹缺陷，并显著改善了应力分布的均匀性，为高质量铬薄膜的制备提供了可重复的技术路径。
Abstract：To address the issues of periodic concentric circular fringes and stress ring defects observed in the magnetron sputtering deposition of Cr thin films， this paper proposes a process optimization strategy combining working pressure regulation with dual-target co-sputtering. The effects of various working pressures and target configurations on stress distribution were systematically investigated and compared through experiments. The results indicate that increasing the working pressure and introducing a dual-target confocal facing sputtering configuration can significantly enhance the scattering of sputtered particles during transport， thereby effectively mitigating the bombardment of high-energy particles on the substrate. The optimized process successfully eliminated the concentric circular fringe defects on the film surface and significantly improved the uniformity of stress distribution， providing a reproducible technical pathway for the fabrication of high-quality chromium thin films.
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基本信息:
DOI：10.13922/j.cnki.cjvst.202602018
中图分类号:TB383.2
引用信息:
[1]付学成,陈亮,王英,等.消除磁控溅射Cr薄膜应力环状缺陷的工艺优化[J].真空科学与技术学报().DOI:10.13922/j.cnki.cjvst.202602018.
基金信息:
国家自然科学基金重大项目子课题（62090052）
2026-06-04
2026-06-04
2026-06-04