2014 04 v.34 413-420
原子层沉积技术的发展现状及应用前景
基金项目(Foundation):
邮箱(Email):
DOI:
中文作者单位:
安徽大学物理与材料科学学院;
摘要(Abstract):
随着微电子行业的发展,集成度不断提高、器件尺寸持续减小,使得许多传统微电子材料和科技面临巨大挑战,然而原子层沉积(ALD)技术作为一种优异的镀膜技术,因其沉淀的薄膜纯度高、均匀性及保行性好,还能十分精确地控制薄膜的厚度与成分,仍然备受关注并被广泛应用于半导体、光学、光电子、太阳能等诸多领域。本文简要介绍了ALD技术的原理、沉积周期、特征、优势、化学吸附自限制ALD技术和顺次反应自限制ALD技术及ALD本身作为一种技术的发展状况(T-ALD,PEALD和EC-ALD等);重点叙述了ALD技术在半导体领域(高k材料、IC互连技术等)、光学薄膜方面、纳米材料方面、催化剂的应用和新成果。最后,对ALD未来的发展应用前景进行了展望。
关键词(KeyWords):
原子层沉积技术;;薄膜沉积;;高k材料;;光学薄膜;;催化剂
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[15]Flowers B H,Wade TL,Garvey J W.Journal of Electroanalytical Chemistry[J],2002,524-525(3):273-285
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[30]Wang Q.Studies Investigation on Characteristics of Atomic Layer Deposited Titanium Dioxide Stack Gate Structure Dielectric,[Master Thesis],Xidian University,2012-01
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基本信息:
DOI：
中图分类号:TN304.055
引用信息:
[1]魏呵呵,何刚,邓彬等.原子层沉积技术的发展现状及应用前景[J].真空科学与技术学报,2014,34(04):413-420.
基金信息: