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在显示与柔性电子领域，铟镓锌锡氧薄膜晶体管(IGZTO TFTs)凭借高迁移率、低漏电流及优异的光学透过性，成为推动下一代高分辨率显示、透明电路及柔性传感技术发展的核心器件。高k栅介质材料具备优异的电荷调控能力，可有效降低器件工作电压与亚阈值摆幅，对提升TFTs性能至关重要。本研究采用射频磁控溅射技术，分别以二氧化硅(SiO2)和高k介电材料二氧化铪(HfO2)为栅介质层制备了IGZTO TFTs。研究表明，通过HfO2栅介质与IGZTO有源层的界面调控及栅压调制，显著优化了器件载流子传输特性，实现了低电压驱动与低亚阈值摆幅，有效提升了器件的电学性能与稳定性。相比于SiO2/IGZTO TFTs，所制备的HfO2/IGZTO TFTs展现出更优异性能，阈值电压由-7.34调控至0.35 V，亚阈值摆幅由0.827降低至0.096 V/decade，迁移率由30.3提升至45.8 cm~2V(-1)s-1。器件稳定性进一步得到提升，在负偏压应力(NBS)和正偏压应力(PBS)下的阈值电压偏移ΔVth分别为-0.21 V和-0.11 V。结果表明，室温下制备的兼具高迁移率与高稳定性的HfO2/IGZTO TFTs在未来高分辨率显示及先进柔性电子等领域有着广阔的应用前景。
Abstract：In the fields of display and flexible electronics, indium gallium zinc tin oxide thin-film transistors(IGZTO TFTs) have become core devices promoting the development of next-generation high-resolution displays,transparent circuits and flexible sensing technologies, owing to their high mobility, low leakage current and excellent optical transmittance. High-k gate dielectrics possess outstanding charge modulation capability, which can effectively reduce operating voltage and subthreshold swing of devices, playing a crucial role in improving TFTs performance. In this work, IGZTO TFTs were fabricated by radio frequency magnetron sputtering with SiO2 and high-k HfO2 as gate dielectrics, respectively. The results demonstrate that interface engineering and gate voltage modulation between HfO2 dielectric and IGZTO channel layer remarkably optimize carrier transport behavior,realize low-voltage driving and low subthreshold swing, and greatly enhance electrical characteristics as well as bias stability. Compared with SiO2/IGZTO TFTs, HfO2/IGZTO TFTs exhibit superior device performance: the threshold voltage is tuned from -7.34 to 0.35 V, subthreshold swing decreases from 0.827 to 0.096 V/decade, and field-effect mobility increases from 30.3 to 45.8 cm~2V-1s-1. Device stability is also significantly improved, with threshold voltage shifts ΔVth of -0.21 V and -0.11 V under negative bias stress(NBS) and positive bias stress(PBS),respectively. The results indicate that the HfO2/IGZTO TFTs prepared at room temperature, which combine high mobility and high stability, have broad application prospects in future high-resolution displays and advanced flexible electronics.
[1]Powell M J. The physics of amorphous-silicon thin-film transistors[J]. IEEE Transactions on Electron Devices,1989,36(12):2753-2763
[2]Jahinuzzaman S M, Sultana A, Sakariya K, et al. Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress[J]. Applied Physics Letters,2005,87(2):023502-023502-3
[3]Uchikoga S, Ibaraki N. Low temperature poly-Si TFTLCD by excimer laser anneal[J]. Thin Solid Films,2001,383(1):19-24
[4]Geng D, Wang K, Li L, et al. Thin-film transistors for large-area electronics[J]. Nature Electronics,2023,6(12):963-972
[5]Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J]. Nature, 2004,432(7016):488-492
[6]Petti L, Münzenrieder N, Vogt C, et al. Metal oxide semiconductor thin-film transistors for flexible electronics[J].Applied Physics Reviews,2016,3(2):021303
[7]Lee H E, Kim S, Ko J, et al. Skin-like oxide thin-film transistors for transparent displays[J]. Advanced Functional Materials,2016,26(34):6170-6178
[8]Chen W T, Lo S Y, Kao S C, et al. Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors[J]. IEEE Electron Device Letters,2011,32(11):1552-1554
[9]Kamiya T, Nomura K, Hosono H. Present status of amorphous In-Ga-Zn-O thin-film transistors[J]. Science and Technology of Advanced Materials,2010,11(4):044305
[10]Park I P, Hwang B K, Lee B R, et al. Threshold voltage tuning of IGZTO thin-film transistors deposited by RF sputtering for high-resolution flexible displays using deep ultraviolet light[J]. Journal of Materials Chemistry C,2023,11(23):7793-7801
[11]Park E J, Hwang B K, Lee B R, et al. Solution-processed antimony-doped IGZTO thin-film transistors exhibiting superior operational stability under extreme environmental conditions[J]. Journal of Materials Chemistry C,2025,13(35):18079-18091
[12]Kim G B, Kim S E, Kim Y, et al. Exceptional immunity of drain-induced barrier lowering effect in a-IGZTO transistors via favorable coupling effects of metal-H bonding[J]. IEEE Electron Device Letters,2024,45(11):2130-2133
[13]Chang Y H, Yu M J, Lin R P, et al. Abnormal positive bias stress instability of In-Ga-Zn-O thin-film transistors with low-temperature Al2O3 gate dielectric[J]. Applied Physics Letters,2016,108(3):033502
[14]Zheng S Y, Lv S C, Wang C Y, et al. Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT[J]. Nanotechnology,2024,35(15):155-203
[15]Choi I M, Kim M J, On N, et al. Achieving high mobility and excellent stability in amorphous In–Ga–Zn–Sn–O thin-film transistors[J]. IEEE Transactions on Electron Devices,2020,67(3):1014-1020
[16]Fang S H, Zha W J, Zou M J, et al. High-performance bilayer In–Ga–Zn–Sn–O thin-film transistors with moderate oxygen doping at room temperature[J]. IEEE Transactions On Electron Devices,2025,72(7):3617-3623
[17]Raja J, Jang K, Nguyen H H, et al. Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel[J].Current Applied Physics,2013,13(1):246-251
[18]Liu W S, Hsu C H, Jiang Y, et al. Improving device characteristics of dual-gate IGZO thin-film transistors with ArO2 mixed plasma treatment and rapid thermal annealing[J]. Membranes,2022,12(1):49
[19]Li Y, Huang X Q, Liao C W, et al. A dynamic current hysteresis model for IGZO-TFT[J]. Solid-State Electronics,2022,197:108459
[20]Chen Z, Lan L F, Peng J B. Approaching subthresholdswing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric[J]. RSC Advances,2019,9(46):27117-27124
[21]Beckers A, Jazaeri F, Enz C. Theoretical limit of low temperature subthreshold swing in field-effect transistors[J].IEEE Electron Device Letters,2020,41(2):276-279
[22]Pan T M, Chen F H, Shao Y H. High-performance InGaZnO thin-film transistor incorporating a HfO2/Er2O3/HfO2 stacked gate dielectric[J]. RSC Advances, 2015,5(63):51286-51289
[23]Nahar S, Priyadarshi S, Billah M M, et al. A study on high performance, dual-gate a-IZO/a-IGZTO TFTs with excellent stability[J]. IEEE Electron Device Letters,2024,45:1835-1838
[24]Patigul N, Li R, Yang L Y, et al. Effects of N2O plasma treatment on the performance and stability of high indium content InGaZnO thin-film transistors[J]. Journal of Physics D:Applied Physics,2025,58:085308
[25]Kim B K, On N, Choi C H, et al. Polycrystalline indium gallium tin oxide thin-film transistors with high mobility exceeding 100 cm2/Vs[J]. IEEE Electron Device Letters,2021,42:347-350
[26]Li P X, Zhao G L, Dou Y, et al. Investigation on the effects of oxygen flow rate for the performance of InGaSnO thin film transistors[J]. Chinese Journal of Vacuum Science and Technology,2026,46(3):229-236（李盼星,赵庚龙,豆冶,等.氧气流量对InGaSnO薄膜晶体管性能的影响研究[J].真空科学与技术学报，2026,46(3):229-236(in Chinese)）
[27]Ma X C, Abliz A, Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors[J]. Applied Physics Letters, 2025, 126(14):143506
[28]Li J Y, Peng H, Yang H, et al. Abnormal bias instabilities induced by lateral H2O diffusion into top-gate insulator of a-InGaZnO thin-film transistors[J]. IEEE Journal of the Electron Devices Society,2022,10:341-345
基本信息:
DOI：10.13922/j.cnki.cjvst.202604018
中图分类号:TN321.5
引用信息:
[1]邹米捷,吴敏芳,郑定山.HfO_2栅介质调控IGZTO薄膜晶体管电学性能及稳定性[J].真空科学与技术学报,2026,46(07):674-681.DOI:10.13922/j.cnki.cjvst.202604018.
基金信息:
湖北省自然科学基金创新群体项目（2023AFA025）; 湖北省大学生创新训练计划项目（Yz2024313）
2026-06-26
2026-06-26
2026-06-26